Sugawara Mitsuru | Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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概要
- Sugawara Mitsuruの詳細を見る
- 同名の論文著者
- Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japanの論文著者
関連著者
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara M
Fujitsu Laboratories Ltd.
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Sugawara Mitsuru
北海道大学 薬学研究臨床薬剤学
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Sugawara M
Semiconductor Company Sony Corporation
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Sugawara M
Fujitsu Limited And Fujitsu Laboratories Limited
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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MUKAI Kohki
Fujitsu Laboratories Ltd.
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MUKAI Kohki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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Mukai K
Univ. Tokyo Chiba Jpn
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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Akiyama Tomoyuki
Qd Laser Inc.
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Nakata Y
Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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ISHIKAWA Hiroshi
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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OHTSUKA Nobuyuki
Fujitsu Laboratories Ltd.
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YASUOKA Nami
Fujitsu Limited and Fujitsu Laboratories, Limited
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Ekawa Mitsuru
Fujitsu Laboratories Ltd.
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Yokoyama N
Fujitsu Laboratories Ltd.
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Ishikawa H
Fukuyama Univ. Hiroshima Jpn
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Ishikawa Hiroshi
Fujitsu Laboratories Limited
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Kawaguchi Kenichi
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yasuoka Nami
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ekawa Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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WADA Osamu
Department of Applied Quantum Physics, Kyushu University
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AWANO Yuji
Fujitsu Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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Ebe Hiroji
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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Kita T
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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KITA Takeshi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
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HATORI Nobuyuki
Fujitsu Laboratories Ltd.
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AKIYAMA Tomoyuki
Femtosecond Technology Research Association
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SHOJI Hajime
Fujitsu Laboratories Ltd.
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Wada O
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Ebe H
Univ. Tokyo Tokyo Jpn
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Wada Osamu
The Femtosecond Technology Research Association
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Wada Osamu
Department Of Applied Quantum Physics Kyushu University
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YAMAZAKI Susumu
Fujitsu Laboratories Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Yamazaki Shigeru
Corporate R&d Center Mitsui Mining & Smelting Co. Lid.
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Kita T
Institute Of Natural Science Kobe University
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Arakawa Yasuhiko
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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TAKANOHASHI Tsugunori
Fujitsu Laboratories Ltd.
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ISOZUMI Shoji
Fujitsu Laboratories Ltd.
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NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Yamazaki S
Fujitsu Laboratories Ltd.
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Kita Takeshi
Department Of Bacteriology Hirosaki University School Of Medicine
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Futatsugi T
Fujitsu Laboratories Ltd.
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Yamazaki Susumu
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Ebe Hiroji
Institute Of Industrial Science (iis) The University Of Tokyo
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Kita Takashi
Department Of Anesthesiology Osaka Police Hospital
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Takanohashi Tsugunori
Fujitsu Laboratories
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Nakajima Kazuo
Fujitsu Laboratories Lid.
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Kawaguchi Kenichi
Fujitsu Laboratories Limited
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Wada Osamu
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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Ebe Hiroji
Nanoelectronics Collaborative Research Center (NCRC), Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
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Akiyama Tomoyuki
QD Laser Inc., Kudankita, 1-14-17 Chiyoda-ku, Tokyo 102-0073, Japan
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Kawaguchi Kenichi
Fujitsu Limited and Fujitsu Laboratories, Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yasuoka Nami
Fujitsu Limited and Fujitsu Laboratories, Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ekawa Mitsuru
Fujitsu Limited and Fujitsu Laboratories, Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sugawara Mitsuru
Fujitsu Limited and Fujitsu Laboratories, Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Akiyama Tomoyuki
QD Laser Inc., 1-14-17 Kudankita, Chiyoda-ku, Tokyo 102-0073, Japan
著作論文
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
- Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
- Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum Wells
- Slow Carrier Relaxation among Sublevels in Annealed Self-Formed InGaAs/GaAs Quantum Dots
- The Acceptor Level of Fe in In_ Ga_ P
- Growth of Columnar Quantum Dots by Metalorganic Vapor-Phase Epitaxy for Semiconductor Optical Amplifiers
- Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)