NAKAJIMA Kazuo | Fujitsu Laboratories Ltd.

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概要

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著作論文

The Acceptor Level of Fe in In_ Ga_ P
EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
1.3 μm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution
SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices

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