Ozeki Masashi | Fujitsu Laboratories Lid.

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概要

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著作論文

Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
Growth of InGaAsP Quaternary by Chloride VPE
Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
Control of GaAs on Si Interface Using Atomic Layer Epitaxy
Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy

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