Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

スポンサーリンク

概要

著者

関連論文

Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
The Acceptor Level of Fe in In_ Ga_ P
Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
Growth of InGaAsP Quaternary by Chloride VPE
EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling Microscopy
Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
Observation of Defects in Laser-Crystallized Polysilicon Thin Films by Hydrogenation and Raman Spectroscopy
A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
Control of GaAs on Si Interface Using Atomic Layer Epitaxy
Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
Observation of Atomic Structure by Scanning Tunneling Microscopy of Vicinal Si(100) Surface Annealed in Hydrogen Gas
Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
Substrate Bias Effect on Ion-Implanted GaAs MESFETs
Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
Photoluminescence of GaAs Grown by Vapor Phase Epitaxy
Photoluminescence Study of Carbon Doped Gallium Arsenide
Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
1.3 μm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
Magnetophonon Effect and Energy Band Parameters of InP
Magnetophonon Resonance in n-InP : Physical Acoustics
Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy
Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution
Restraint of Copper Oxidation Using Barrier Restoration Technique with Cu–Mn Alloy
Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
Exciton-Transition Energies and Band Structure of (GaP)_n(GaAs)_n/GaAs Atomic-Layer Superlattices
SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices
Local Atomic Arrangement in an In_Ga_As Quasi-Binary Alloy Grown by Liquid-Phase Epitaxy

もっと見る

スポンサーリンク