Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs

スポンサーリンク

概要

著者

関連論文

Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling Microscopy
A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
Control of GaAs on Si Interface Using Atomic Layer Epitaxy
Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
Observation of Atomic Structure by Scanning Tunneling Microscopy of Vicinal Si(100) Surface Annealed in Hydrogen Gas
Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
Substrate Bias Effect on Ion-Implanted GaAs MESFETs
Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
Hot Electron Effect in Short n^+nn^ GaAs
Photoluminescence Study of Carbon Doped Gallium Arsenide
Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology : B-5: GaAs IC
Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
The Effect of the Oxide Layer on the Diffusion of Ga in Si
Effects of the Heating Rate in Alloying of An-Ge to n-Type GaAs on the Ohmic Properties
Arsenic Diffusion into Silicon from Elemental Source
Diffusion Profiles of Arsenic in Silicon Observed by Backscattering Method and by Electrical Measurement
Simplified Expression for the Distribution of Diffused Impurity
Atmosphere Effect on Migration of Co and Si in Au-Go-Si System
The Anomalous Diffusion of Gallium in Silicon
SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices
Picosecond HEMT Pholodetector

もっと見る

スポンサーリンク