Arsenic Diffusion into Silicon from Elemental Source

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概要

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• Arsenic is diffused into silicon from an elemental source by using the evacuated closed tube method. A high surface concentration above 2×10^<20> atoms/cm^3 is obtained over a wide range of diffusion temperatures. The surface concentration determined by an electrical measurement changes little over a wide range of arsenic vapor pressures in the closed tube while the surface concentration determined by the backscattering method increases with the vapor pressure of arsenic. The diffusion coefficient of arsenic in silicon determined from sheet conductivity of a diffused layer is 969 exp (-4.45/kT) cm^2/sec.

• 社団法人応用物理学会の論文
• 1975-04-05

著者

• Ohkawa Shinji

  Fujitsu Laboratories Ltd.

• Nakajima Yoshio

  Fujitsu Laboratories Ltd.

• FUKUKAWA Yukio

  Fujitsu Laboratories Ltd.

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• Simplified Expression for the Distribution of Diffused Impurity
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• The Anomalous Diffusion of Gallium in Silicon

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