A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-05-20
著者
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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IMAMURA Kenichi
Fujitsu Laboratories Ltd.
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Imamura K
Fujitsu Lab. Ltd. Kanagawa Jpn
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SHIBATOMI Akihiro
Fujitsu Limited
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Nishi Hidetoshi
Fujitsu Limited
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OHNISHI Toyokazu
Fujitsu Laboratories Limited
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SUZUKI Shoichi
Fujitsu Laboratories Limited
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NAKAI Kenya
Fujitsu Laboratories Limited
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Imamura Kimitake
Faculty Of Engineering Yokohama National University
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Shibatomi Akihiro
Fujitsu Laboratories Limited
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Nakai Kenya
Fujitsu Laboratories
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Yokoyama N
Fujitsu Laboratories Ltd.
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Ohshima T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Shibatomi A
Fujitsu Lab. Ltd. Atsugi Jpn
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Nishi H
Fujitsu Limited
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Nishi Hidetoshi
Fujitsu Laboratories Limited
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