Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1973-03-05
著者
-
Ozeki Masashi
Fujitsu Laboratories Ltd.
-
Ozeki Masashi
Fujitsu Laboratories
-
NAKAI Kenya
Fujitsu Laboratories Limited
-
Nakai Kenya
Fujitsu Ltd. Fujutsu Laboratories Ltd.
-
Nakai Kenya
Fujitsu Laboratories
-
RYUZAN Osamu
Fujitsu Laboratories
-
DAZAI Kouichi
Fujitsu Laboratories Ltd.
-
Nakai Kenya
Fujitsu Laboratories Ltd.
関連論文
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Growth of InGaAsP Quaternary by Chloride VPE
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
- Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
- Substrate Bias Effect on Ion-Implanted GaAs MESFETs
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
- Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
- The Vapor Growth of Pb_Sn_xTe Single Crystals
- The Temperature Dependence of Hall Coefficient of Pb_Sn_Te Single Crystals
- Photoluminescence of GaAs Grown by Vapor Phase Epitaxy
- Liquid Phase Epitaxial Growth of In_Ga_xP
- Electrical Properties of n-Type Gallium Arsenide at High Temperatures
- Hot Electron Effect in Short n^+nn^ GaAs
- Photoluminescence Study of Carbon Doped Gallium Arsenide
- Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
- GaP Liquid Phase Epitaxial Growth Using a Vertical Furnace System
- Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
- Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy
- Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
- Exciton-Transition Energies and Band Structure of (GaP)_n(GaAs)_n/GaAs Atomic-Layer Superlattices
- SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices