Ozeki Masashi | Fujitsu Laboratories Ltd.

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概要

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著作論文

Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
Growth of InGaAsP Quaternary by Chloride VPE
Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
Control of GaAs on Si Interface Using Atomic Layer Epitaxy
Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
Photoluminescence of GaAs Grown by Vapor Phase Epitaxy
Photoluminescence Study of Carbon Doped Gallium Arsenide
Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
Magnetophonon Effect and Energy Band Parameters of InP
Magnetophonon Resonance in n-InP : Physical Acoustics
Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy

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