Magnetophonon Effect and Energy Band Parameters of InP
スポンサーリンク
概要
- 論文の詳細を見る
Magnetophonon effect has been studied in the transverse magnetoresistanceof high purity epitaxial n-InP at temperatures between 77 and 300 K, by adoptingthe magnetic field modulation and phase sensitive second harmonic detectiontechnique. Up to the 10th extrema are resolved at 88 K. The band edge effectivemass is estimated to be 0.0813f0.001 m at 80 K and 0.0763.4.0.001 m at 282 K.The temperature dependence of the effective mass is discussed by the k'p per-turbation theory and squared momentum matrix element is determined to bef?=16-6[eV]. The enersv bands of InP throushout the entire Brillouin zonehas been calculated by diagonalizing a modified k?p Hamiltonian referred to30 basis states at A=0 and a reasonable agreement with the present data is ob-tained.
- 社団法人日本物理学会の論文
- 1985-02-15
著者
-
Ozeki Masashi
Fujitsu Laboratories Ltd.
-
Ozeki Masashi
Fujitsu Laboratories
-
Hamaguchi C
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
KOMENO Junji
Fujitsu Laboratories Ltd.
-
Komeno J
Fujitsu Laboratories Ltd.
-
NAKASHIMA Takashi
Department of Electronics,Osaka University
-
Ozeki M
Univ. Miyazaki
-
Nakashima Takehiro
Faculty Of Engineering Nagoya Unibersity
-
Nakashima Takashi
Department Of Anatomy Faculty Of Medicine Kyushu University:department Of Anatomy Kyushu Dental Coll
関連論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies