Phonon-Assisted Tunneling in Metal-Oxide-Pb_<1-x>Sn_xTe Junctions
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概要
- 論文の詳細を見る
Electron tunneling effects of Pb. .Sn,To are investigated in N4-I-S junctions.Phonon-assisted tunneling effects are observed in the d'l/cl V' - V characteristics.Assignments of four peaks which appear antisymmetric with respect to zero biasin the cl'l/dV' -V characteristics are made by measuring the composition-dependence of energy positions of these peaks. These assignments are examinedfrom the group theoretical point of view. The energies of the LO phonons at Fpoint are l4.3.J.O.5meV for PbTe and 17.].[.0.5meV for SnTe, which are ingood agreen'tent with the results obtained by the other methods.
- 社団法人日本物理学会の論文
- 1977-07-15
著者
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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MORITANI Akihiro
Department of Electronic and Control Systems Engineering, Shimane University
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NAKAI Junkichi
Department of Electronics, Osaka University
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Nakai J
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nakai Junkichi
Department Of Electronics Faculty Of Engineering Osaka University
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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SHIRAKAWA Tsuguru
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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YOKOGAWA Masamichi
Department of Electronics,Faculty of Engineering,Osaka University
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Moritani A
Department Of Electronic And Control System Eng. Shimane University
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Shirakawa Tsuguru
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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Yokogawa Masamichi
Department Of Electronics Faculty Of Engineering Osaka University:(present Address)sumitomo Electric
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Yokogawa Masamichi
Department Of Electronics Faculty Of Engineering Osaka University
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Moritani Akihiro
Department of Electronics, Faculty of Engineering, Osaka University
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