Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-11-01
著者
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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SONODA Ken-ichiro
Department of Electronic Engineering, Osaka University
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KANNO Koji
Department of Electronic Engineering, Osaka University
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Sonoda K
Department Of Electronic Engineering Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Kanno Koji
Department Of Electronic Engineering Osaka University
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