A Low Power Analog Matched-Filter with Smart Sliding Correlation

スポンサーリンク

概要

• 論文の詳細を見る

• A low power analog matched filter circuit with smart sliding correlation is proposed for direct sequence code division multiple access (DS-CDMA) despreading process. The influence of level shifter mismatch on the trade-off between speed, power and resolution of the analog correlator circuit is investigated with respect to technology scaling. The optimization in power, acquisition time and areal efficiency is considered. Simulation with code length of 127 reveals that the analog matched filter circuit provides good linearity, and dissipates only 22 mW at a voltage supply of 3.3 V and an operational clock frequency of 128 MHz, using 0.35 μm CMOS technology.

• 社団法人 電気学会の論文
• 2003-11-01

著者

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Matsuoka Toshimasa

  Department Of Electronic Engineering Osaka University

• Matsuoka T

  Osaka Univ. Osaka Jpn

• Matsuoka Toshimasa

  The Graduate School Of Engineering Osaka University

• SHIMIZU Shinsaku

  Graduate School of Engineering, Osaka University

• ELTOKHY Mostafa

  Department of Electronics and Information Systems, Osaka University

• Taniguchi K

  Department Of Electronics And Information Systems Osaka University

• Taniguchi K

  Division Of Electrical Electronics And Information Engineering Graduate School Of Engineering Osaka

• Taniguchi K

  Kyushu Univ.

• SHIMIZU Shinsaku

  Department of Electronics and Information Systems, Osaka University

• Eltokhy Mostafa

  Department Of Electronics And Information Systems Osaka University

• Shimizu Shinsaku

  Graduate School Of Engineering Osaka University

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Matsuoka Toshimasa

  Department of Electrical, Electronic and Information Engineering, Osaka University

関連論文

• 3P1-1 液晶等方相での超音波光回折(ポスターセッション)
• 弾性表面波法を利用したゲル状態変化に関する研究 : ゲルの乾燥過程や溶媒交換過程での応用(物性,一般)
• 23pYC-4 モード結合理論による電解質溶液のモル伝道度極小の出現機構(液体・溶液,領域12,ソフトマター物理,科学物理,生物物理)
• 23pRJ-17 高濃度電解質溶液の電気伝導度の理論計算 : 流体力学相互作用の効果(溶液・液体,領域12,ソフトマター物理,化学物理,生物物理)
• 21aTC-11 多価電解質水溶液のMHzからGHz領域に現れる緩和の理論的解析(溶液・液体,領域12,ソフトマター物理,化学物理,生物物理)
• 光-超音波・音響 分子配向の協同性の小さい異方性分子からなる液体における超音波回折光の偏光状態
• 超音波を利用した高分子の分解・重合 (特集 ソノケミストリー)
• M-1 カロリーメトリーによるソノリアクター用超音波振動子の評価(ソノ・ケミストリー)
• A-1 液晶等方相における超音波光回折の偏光状態(超音波物性・材料、フォノン)
• 液体中における超音波による配向誘起と回折光の偏光状態(一般・音波物性)
• 液体中における超音波による配向誘起と回折光の偏光状態
• 化学的定量法による円筒型超音波反応器の評価(ソノケミストリー,超音波キャビテーションの科学と応用論文特集)
• Surface Wave Velocity in Methylcellulose Hydrogel in the Drying Process
• 表面波速度測定によるハイドロゲルの弾性的性質の評価
• P3-71 KI定量法による円筒型超音波反応器の評価(ポスターセッション3(概要講演))
• J-4 異方性分子からなる液体における超音波回折光の偏光状態(光-超音波・光音響法)
• 20aXG-2 流動下にある流体の分子配向に関する分子動力学法による研究(溶液・液体,過冷却液体・ガラス,領域12(ソフトマター物理,化学物理,生物物理))
• 超音波基礎 液体中の超音波誘起複屈折の正弦成分の直接観察
• 単一気泡の化学作用 (特集 いろいろつかえるソノケミストリー(2))
• P3-5 音響的手法による補強剤配合SBRの評価(ポスターセッション3(概要講演))
• Effective Cancer Targeting Using an Anti-tumor Tissue Vascular Endotheliumm specific Monoclonal Antibody (TES-23)
• Atomic configuration of boron pile-up at the Si/SiO2 interface
• Influences of Point and Extended Defects on As Diffusion in Si(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Process Variation Compensation Technique for 0.5-V Body-Input Comparator
• Process Variation Compensation Technique for Voltage-controlled Ring Oscillator
• Analytical Expression Based Design of a Low-Voltage FD-SOI CMOS Low-Noise Amplifier(Analog Circuit Techniques and Related Topics)
• Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
• Watch-Dog Circuit for Quality Guarantee with Subthreshold MOSFET Current(New System Paradigms for Integrated Electronics)
• Watchdog Circuit for Product Degradation Monitor using Subthreshold MOS Current
• A New Analog Correlator Circuit for DS-CDMA Wireless Applications
• Error Analysis on Simultaneous Data Transfers in CDMA Wired Interface
• C-12-26 An Auto-sensitivity Control Circuit for DS-CDMA Receiver Circuit
• Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
• Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
• Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
• Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
• Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
• Display Wall Empowered Visual Mining for CEOP Data Archive(Coordinated Enhanced Observing Period(CEOP))
• Initial CEOP-based Review of the Prediction Skill of Operational General Circulation Models and Land Surface Models(Coordinated Enhanced Observing Period(CEOP))
• Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
• Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
• Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
• Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
• 13pTH-5 一般化ランジェバン理論に基づく不均一場下の液体のダイナミクスの理論(化学物理・理論, 領域 12)
• B-3 棒状ミセル水溶液におけるミセルモノマー交換反応による超音波緩和の観測(超音波物性・材料)
• 31pZD-5 液体の輸送物性に対する「異常な」圧力効果に関する理論的研究
• Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
• Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
• Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
• Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
• Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
• Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
• Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
• Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
• コヒーレントブリュアン散乱法による液体の超音波測定
• Role of Boron Atoms on Fluorine Diffusion under Various Stages of Annealing
• Boron Emission Rate from Si/SiO_2 Interface Traps to Bulk Silicon for Dose Loss Modeling
• Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
• Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
• A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(the IEEE International Coference on SISPAD '02)
• New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry
• Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Two-Dimensional Simulation of Quantum Tunneling across Barrier with Surface Roughness
• P1-B-14 弾性表面波によるガラス基板上の高分子薄膜の物性評価(超音波物性・材料,ポスターセッション1(概要講演))
• Temperature Dependence of Electron Mobility in Si Inversion Layers
• A Low Power 622MHz CMOS Phase-Locked Loop with Source Coupled VCO and Dynamic PFD (Special Section of Papers Selected from ITC-CSCC'96)
• Identification of Functionally Important Amino Acid Residues in Zymomonas mobilis Levansucrase
• A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance(Special lssue on Silicon RF Device & Integrated Circuit Technologies)
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Electroreflectance Study of Cd_xHg_Te
• Optical Constants of HgTe and HgSe
• Electroreflectance Measurements on Cd_xHg_Te
• A-3-1 A 5Msample/s 0.965-mW Switched-Capacitor Filter in 0.6-μm CMOS Technology
• High-Sensitivity SOI MOS Photodetector with Self-Amplification
• High Sensitivity Photodetector with Self-Amplification Capability
• A Low Power Analog Matched-Filter with Smart Sliding Correlation
• Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
• Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
• Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
• A-5-3 Speed-Power-Resolution Tradeoff in Analog Correlator Circuit
• Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon
• Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
• Temperature Dependence of k_BTC Noise in "Coulomb Blockade" Regime
• Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon
• A Short Channel HEMT Model for Circuit Simulation Based on Physical Structure
• Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
• Increasing Atmospheric Temperature in the Upper Troposphere and Cumulus Convection over the Eastern Part of the Tibetan Plateau in the Pre-Monsoon Season of 2004(Coordinated Enhanced Observing Period(CEOP))
• Application of Kelvin Technique in A Gas-Sensor Read-Out Circuit
• A Switched-Capacitor Programmable Gain Amplifier Using Dynamic Element Matching
• Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications (Special Issue on Technology Challenges for Single Electron Devices)
• Physical Models for Deep Submicron Device Simulation
• Floating Voltage Reference Generator for A/D Converters
• Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
• A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
• Fine structures in Optical Absorption Spectra of MnO

もっと見る 閉じる

スポンサーリンク