A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
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概要
- 論文の詳細を見る
Hot electron transport in a MOS inversion layer on a (100) silicon surface was analyzed by using a rigorous Monte Carlo method while taking into account changes in subband structures due to electron repopulation. An iterative procedure of the method consisted of a self-consistent calculation of the Schrodinger and Poisson's equations as well as a Monte Carlo calculation for electron scattering. The calculated relative electron population in each subband significantly differed from the results of a conventional Monte Carlo calculation in a tangential electric field higher than 10 kV/cm, above which carrier heating effects greatly influence the subband structures. The calculated electron drift velocity is in reasonable agreement with the experimental data.
- 社団法人応用物理学会の論文
- 1987-09-20
著者
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Shirahata Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University:(present Address) Lsi Research And
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Shirahata Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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TANIGUCHI Kenji
Department of Electronics, Faculty of Engineering, Osaka University
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