Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
スポンサーリンク
概要
- 論文の詳細を見る
- 1974-04-05
著者
-
YAMADA Masayoshi
Department of Electronics,Faculty of Engineering,Kobe University
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
NAKAI Junkichi
Department of Electronics, Osaka University
-
Nakai Junkichi
Department Of Electronics Faculty Of Engineering Osaka University
-
Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
Yamada Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University
-
Yamada Masayoshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
-
HAMAGUCHI Chihiro
Department of Electronics, Faculty of Engineering, Osaka University
関連論文
- Brillouin Scattering Studies on Elastic Constants and Polytypes en GaSe_S_x (0≤x≤1) Layered Crystals
- Raman Microprobe Study on Relaxation of Residual Stresses in Patterned Silicon-on-Sapphire
- Raman Scattering Characterization of Residual Stresses in Silicon-on-Sapphire
- Laser-Oscillating-Mode Dependence of Temperature Distributions in Laser Annealing of Semiconductors
- Elastic Constants of GaS and GaSe Layered Crystals Determined by Brillouin Scattering
- Brillouin Scattering in Layered Semiconductors using Microprocessor-controlled Fabry-Perot Interferometer : Physical Acoustics II
- Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing
- Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering
- Crystallization of Amorphous Silicon Layers RF-Sputtered on Sapphire by CW Ion Laser Annealing
- Brillouin Scattering in CdIn_2S_4 Crystal:Determination of Elastic Constants and Photoelastic Constants
- Coexistence of Surface and Bulk Acoustic Waves in Acoustoelectric Domains in Semiconducting CdS
- Infrared Study of Surface Phonon Modes in ZnO Small Crystals
- Transverse Electric Current Effect on Surface Acoustin Wave Propagation on Photoconductive CdS
- Optical Absorption for Acoustic Flux in Semiconductive CdS Single Crystal
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Relationship between the cone crack and fracture mode in ceramics under high-velocity-projectile impact
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- One-Dimensional Processor Array System for Fast Analysis of Tissue Motion in Ultrasonogram
- A Real-Time Processing System for Pulsation Detection in Neonatal Cranial Ultrasonogram
- Pulsation Detection from Noisy Ultrasound-Echo Moving Images of Newborn Baby Head Using Fourier Tansform
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Calculation of Characteristic X-rays in Diagnostic X-ray Spectrum
- Effect of Electron Energy Distribution on Bremsstrahlung Spectrum
- Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- High-Sensitivity SOI MOS Photodetector with Self-Amplification
- High Sensitivity Photodetector with Self-Amplification Capability
- Wannier-Stark Localization in Superlattices
- New Synthesis of Heterobifunctional Poly(ethylene glycol) Possessing a Pyridyl Disulfide at One End and a Carboxylic Acid at the Other End
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Magneto-Impurity Resonance in n-Type Germanium
- Magnetophonon Resonance in n-Type Germanium at Low Temperatures
- Magnetophonon Effect in p-InSb
- Magnetophonon Resonance and Fourier Analysis in n-GaAs
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Resonant Brillouin Scattering in Opaque and Transparent Regions of CdS
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
- Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
- Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
- The Role of the Effective Mass in the Hot-Electron Magnetophonon Resonance in n-Type Germanium
- Effect of Electric Field on the Magnetophonon Oscillations in n-InSb and n-GaAs
- Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
- Measurements of Intervalley Phonons in n-Si by Magnetphonon Resonance : Physical Acoustics
- Magnetophonon Resonance in n-Type Germanium
- Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance : Physical Acoustics
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- Electrical Conduction and Switching in Amorphous Semiconductors
- Residual Strain in Semi-Insulating InP Wafers Treated by Multiple-Step Wafer Annealing