Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-05-05
著者
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ABE Kenji
Department of Biochemistry 1, Hamamatsu University School of Medicine
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Yamamoto Keiichi
Department Of Electronics Faculty Of Engineering Kobe University
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Abe Kohji
Department Of Materials Science Faculty Of Science Hiroshima University
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Yamamoto K
Kyushu Univ. Fukuoka Jpn
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Yamamoto K
Ntt Basic Res. Lab. Atsugi Jpn
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Abe K
Department Of Applied Physics And Chemistry University Of Electro-communications
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YAMADA Masayoshi
Department of Electronics,Faculty of Engineering,Kobe University
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YAMAZAKI Ken-ichi
Department of Electronics, Faculty of Engineering, Kobe University
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Abe K
Department Of Materials Science And Engineering Waseda University
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Yamamoto K
Harima Institute Riken (the Institute Of Physical And Chemical Research):graduate School Of Engineer
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Yamada Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University
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Yamamoto Keiichi
Department Of Biology Chiba University
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Abe Kenji
Department Of Biochemistry 1 Hamamatsu University School Of Medicine
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Yamada Masayoshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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