Relationship between the cone crack and fracture mode in ceramics under high-velocity-projectile impact
スポンサーリンク
概要
- 論文の詳細を見る
Ceramics will be widely used for enhancing the efficiency of power generating systems, particularly gas turbines. However, ceramics used in these systems suffer damage owing to impact by foreign objects. In this study, various ceramic plates are impacted by a spherical projectile with an impact velocity of 320 m/s. The volume of the cone cracks formed on the plates decreases with an increase in the fracture toughness of the ceramic material. No cone cracks are formed on the zirconia (3Y-TZP) plate because crack formation is prevented by stress-induced phase transformation outside the impacted region. The volume of the cone crack is higher and the energy consumed by surface formation is smaller in transgranular-fractured ceramics than in intergranular-fractured ones. The fracture process can be controlled by controlling the characteristics of the grain boundaries, as well as by stress-induced phase transformation.
- 公益社団法人 日本セラミックス協会の論文
著者
-
Sekine Kiyoto
Mino Ceramic Co. Ltd.
-
Tanabe Yasuhiro
Department of Cardiology, Tokyo Metropolitan Hiroo Hospital
-
YAMADA Masayoshi
Department of Electronics,Faculty of Engineering,Kobe University
-
Kumazawa Takeshi
Mino Ceramic Co., Ltd.
-
Kumazawa Takeshi
Mino Ceramic Co.
-
Yamada Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University
-
Tanabe Yasuhiro
Department Of Cardiology Tokyo Metropolitan Hiroo General Hospital
-
Yamada Masayoshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
-
TANABE Yasuhiro
Department of Engineering, Nagoya University
-
YAMADA Masayoshi
Department of Engineering, Nagoya University
関連論文
- PJ-020 Electrophysiological Characteristics of Bundle Branch Reentrant Ventricular Tachycardia and Interfascicular Ventricular Tachycardia(PJ004,Arrhythmia, Others (Clinical/Diagnosis/Treatment) 8 (A),Poster Session (Japanese),The 73rd Annual Scientific M
- Brillouin Scattering Studies on Elastic Constants and Polytypes en GaSe_S_x (0≤x≤1) Layered Crystals
- Raman Microprobe Study on Relaxation of Residual Stresses in Patterned Silicon-on-Sapphire
- Raman Scattering Characterization of Residual Stresses in Silicon-on-Sapphire
- Laser-Oscillating-Mode Dependence of Temperature Distributions in Laser Annealing of Semiconductors
- Elastic Constants of GaS and GaSe Layered Crystals Determined by Brillouin Scattering
- Brillouin Scattering in Layered Semiconductors using Microprocessor-controlled Fabry-Perot Interferometer : Physical Acoustics II
- Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing
- Anomalous Residual-Stress in Pulsed-Laser-Annealed Silicon-on-Sapphire Revealed by Raman Scattering
- Crystallization of Amorphous Silicon Layers RF-Sputtered on Sapphire by CW Ion Laser Annealing