Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method
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概要
- 論文の詳細を見る
Bulk InxGa1-xAs is an excellent lattice-matched substrate material for InGaAs-based laser diodes. However, it is very difficult to grow compositionally homogeneous InxGa1-xAs single crystal. The growth of single crystal with homogeneous composition using the newly developed traveling liquidus zone (TLZ) growth method is expected. In the TLZ method, cylindrically shaped polycrystalline starting material with a graded compositional profile is the basic requirement. This paper presents some results of micro-Raman scattering studies of the compositional fraction in these starting materials. The compositions evaluated by Raman scattering in various InxGa1-xAs wafer-type samples show good agreement with those examined by the standard method of chemical analysis. Compositional profiles obtained from as-ground and polished surfaces have been compared to understand the necessity of surface polishing in our experiments. The results presented here demonstrate that micro-Raman scattering is one of the best non-destructive methods for analyzing the entire compositional range of InGaAs compound materials.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-02-28
著者
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Islam Md.
Department Of Advanced Materials Science And Engineering Yamaguchi University
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Tatsumi Masami
Sumitomo Electric Industries Ltd. Itami Works
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Kinoshita Kyoichi
National Space Development Agency Of Japan Tsukuba Space Center
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Verma Prabhat
Department Of Applied Physics Osaka University
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Yamada Masayoshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Verma Prabhat
Department of Electronics and Information Science, Kyoto Institute of Technology, Hashigamicho, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Kinoshita Kyoichi
National Space Development Agency of Japan, Tsukuba Space Center, 2-1-1, Sengen, Tsukuba-shi, Ibaraki 305, Japan
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Yamada Masayoshi
Department of Electronics and Information Science, Kyoto Institute of Technology, Hashigamicho, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Tatsumi Masami
Sumitomo Electric Industries Ltd., Itami Works, 1-1-1, Koya-kita, Itami, Hyogo 664, Japan
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