Photoelastic Measurement of Strain Induced by Die-Bonding of GaAs Chip on a Copper Heatsink Plate
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概要
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Die-bonding-induced strain in a GaAs chip bonded on a copper heatsink plate has been measured with a reflection type of infrared polariscope. The spatial distributions of bonding-induced strain were seen to vary from sample to sample. The maximum value of the bonding-induced strain was found to be of the order of 10^<-4>, which corresponded to about 1/10 of that estimated from the thermal expansion difference for the unit length between GaAs and copper when it was cooled down from the die-bonding temperature to the room temperature.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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Chu Tao
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Yamada Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University
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Yamada Masayoshi
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Yamada Masayoshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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