In Situ Microscopic Observations of Melting of Thin Si Film Induced by CW Ar-Ion Laser Oscillating in Various Modes
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The melting of thin Si film induced by irradiation from a focused beam of a CW Ar-ion laser oscillating in various modes is directly observed using an optical microscope. It is found that as the laser power is increased, liquid spots first appear, subsequently, a mixture region in which solid filaments fluctuating in time and space coexist with liquid is formed, and finally a uniformly molten region appears at the center of the solid-liquid mixture region. The shapes of the mixture and uniformly molten regions are shown to be strongly influenced by the laser power and/or mode, that is, by the laser intensity profile. It is confirmed that the TEM_<10> + TEM_<01> -like mode gives a molten shape suitable for recrystallizing Si films, compared with the TEM_<00> and TEM_<02> modes. The size and fluctuation of solid filaments in the mixture region are discussed.
- 社団法人応用物理学会の論文
- 1991-09-15
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