Modeling of Strain Induced by Compositional Variation in Wafer-Shaped Bulk Mixed Crystals

概要

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A radially symmetrical strain model has been proposed to determine the residual strain distribution induced by compositional variation in wafer-shaped bulk mixed crystals. The strain components in cylindrical coordinates are analytically derived by assuming a symmetrical variation of composition along the radial direction and uniform composition along the growth direction. The results obtained from the model demonstrated that the quantitative amount of strain and its distribution are highly dependent on the radial compositional profile and its range. The strain model is confirmed with the combination of micro-Raman scattering and optical transmission experiments, which were performed in single-crystalline Si1-xGex mixed material grown by the floating zone method. The experimental results indicated that there exists residual strain due to the compositional variation along the radial direction in Si1-xGex wafers, which is well explained by the strain model proposed here.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-08-15