Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition

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概要

• 論文の詳細を見る

• Photoreflectance and photoluminescence measurements are carried out to in-vestigate optical properties of (GaAs)./ (AIAs), superlattices with m = 3, 5, 7, 9 and1 l at room temperature, in order to clarify the cross over of the direct and indirect op-tical transition. Combining the transition energies determined from the photoreflecLance measurements with the photoluminescence data, the superlattices are shown tobe indirect for m<7 and direct for m>7. Energy band calculations based on thesp's' tight-binding method are found to explain these results consistently. The lowestallowed direct transition energy obtained from the tight-binding theory agrees wellwith the energy gap determined from the photoreflectance measurements, whereas thelowest-lying indirect gap agrees with the photoluminescence peak energy for m< 7.[photoreflectance, short period superlattices, (GaAs)./ (AIAs)., photolumines- ll cence, direct transition, indirect transition, electronic structure of superlattices l

• 社団法人日本物理学会の論文
• 1989-06-15

著者

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Fujimoto Hiroki

  Department Of Chemistry Faculty Of Science Kyoto University

• SASA Shigehiko

  Fujitsu Laboratories Ltd.

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• FUJIMOTO Hidetoshi

  Department of Electronic Engineering,Faculty of Engineering,Osaka University

• IMANISHI Kenji

  Department of Electronic Engineering,Faculty of Engineering,Osaka University

• NALAZAWA Takeshi

  Department of Electronic Engineering,Faculty of Engineering,Osaka University

• HIYAMIZU Satoshi

  Department of Materials Physics,Faculty of Engineering Science,Osaka University

• Fujimoto Hidetoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Sasa S

  Fujitsu Laboratories Ltd.

• Imanishi Kenji

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Nakazawa T

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Nakazawa Takeshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Fujimoto Hidetoshi

  Department of Chemistry, Faculty of Science, Kyoto University

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