Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures

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概要

• 論文の詳細を見る

• Magnetophonon resonance observed at high electric and magnetic fields in thin++n nn GaAs structure is shown to be well explained in terms of electric field inducedinelastic infer-Landau-level scattering (HILLS). Splitting and inversion of theresonance peaks observed at high electric fields are explained by theoretical analysisof magnetoconductivity o.. based on Kubo form?ala. The gerxeral oscillatory structureof the magnetoconductivity is given by7S.,.V- /?o...- ) r exp ( - nry) { cos 2nr cta.-Y- - ejco.-EXr= 125-I-cos 2nr oa. - -e;-rl l,which is valid for<'<< l, where ')t is the broadening factor, co.)=cta(,/co., co. and co. arethe cyclotron and optic phonon frequencies, e=J'2,eEl./hctc., l. is the classicalcyclotron radius and E is the magnitude of the electric field.

• 社団法人日本物理学会の論文
• 1988-01-15

著者

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Taniguchi Kenji

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Mori Nobuya

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Nakamura Noboru

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Nakamura Noboru

  Department Of Earth & Planetary Sciences Kobe University

• Nakamura Noboru

  Department Of Earth & Planetary Sciences Faculty Of Science And Division Of The Nature Of The Ea

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

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