Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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HARAGUCHI Masanobu
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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Haraguchi Masaru
Department Of Electrical And Electronics Engineering Sophia University
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Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Kubo Hitoshi
Department Of Orthopaedic Surgery Kakogawa National Hospital
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Hamaguchi C
Osaka Univ. Osaka Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Kubo H
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Fukui Masao
Department Of Optical Science And Technology Faculty Of Engineering The University Of Tokushima
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Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Matsumoto Takuji
Department Of Machine Intelligence And System Engineering Intelligent System Design Laboratory Tohok
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Kubo Hitoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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原口 雅宣
徳島大学工学部
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Fukui Masuo
Department Of Electrical And Electronic Engineering Tokushima University
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MATSUMOTO Toshiyuki
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
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Haraguchi Masanobu
Department Of Electrical And Electronics Engineering Sophia University
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Haraguchi Masanobu
Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
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原口 雅宣
徳島大学大学院ソシオテクノサイエンス研究部
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Matsumoto Toshiyuki
Department Of Chemistry Faculty Of Science Hokkaido University
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Matsumoto Takuya
Isir Osaka Univ.
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