Picosecond Luminescence Decay in Porous Silicon
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概要
- 論文の詳細を見る
Picosecond luminescence decay is observed for the first time in porous Si. This decay consists of two exponential decay components that become large with decreasing emission energy. Besides the picosecond luminescence decay, nanosecond luminescence decay was also observed. This shows nonexponential decay behavior with dominant components between 100 ns and 1 μs. This also becomes large with decreasing emission energy. Based on our results, the luminescence in porous Si seems to originate partially from the amorphous phase.
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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FUTAGI Toshiro
Electronics Research Laboratories, Nippon Steel Corporation
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Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Mimura Hidenori
Research Institute Of Electrical Commnication Tohoku University
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Mimura Hidenori
Graduate School Of Electric Science And Technology Shizuoka University
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Matsumoto Takahiro
Electronics Research Laboratories Nippon Steel Corporation
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Futagi T
Nippon Steel Corp. Kanagawa Jpn
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Mimura H
Shizuoka University
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Mimura Hidenori
Electronics Reseach Laboratories Nippon Steel Corporation
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DAIMON Masahiro
Electronics Research Laboratories, Nippon Steel Corporation
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Daimon Masahiro
Electronics Research Laboratories Nippon Steel Corporation
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Matsumoto Takuya
Isir Osaka Univ.
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MIMURA Hidenori
Electronics R&D Laboratories, Nippon Steel Corporation
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FUTAGI Toshiro
Electronics R&D Laboratories, Nippon Steel Corporation
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