Fabrication of Silicon Quantum Wires Using Separation by Implanted Oxygen Wafer

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概要

• 論文の詳細を見る

• A new fabrication method of silicon quantum wires using separation by implanted oxygen (SIMOX) wafer has been proposed, which combines Si KOH anisotropic etching and local oxidation of silicon (LOCOS) techniques. In the fabrication, the cross-sectional dimensions of Si wires are determined solely by the thickness of the SOI layer. Using this novel method, we have fabricated a Si quantum wire with dimensions less than 100 nm and confirmed its great potential for making ultrafine structures without the need for high-resolution lithography or etching.

• 社団法人応用物理学会の論文
• 1994-12-01

著者

• Hashiguchi Gen

  Electronics Reseach Laboratories Nippon Steel Corporation

• Mimura Hidenori

  Electronics Reseach Laboratories Nippon Steel Corporation

• MIMURA Hidenori

  Electronics R&D Laboratories, Nippon Steel Corporation

関連論文

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• Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
• Hydrogen Termination and Optical Properties of Porous Silicon : Photochemical Etching Effect
• Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes
• Wedge-Shaped Silicon Emitter Fabricated by New Method
• Fabrication and Emission Characteristics of Polycrystalline Silicon Field Emitters
• Picosecond Luminescence Decay in Porous Silicon
• Fabrication of Silicon Quantum Wires Using Separation by Implanted Oxygen Wafer
• New Fabrication Method and Electrical Characteristics of Conical Silicon Field Emitters
• Photoluminescence in Hydrogenated Amorphous Carbon Films Prepared at Room Temperature

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