Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-01
著者
-
Kanemitsu Yoshihiko
Institute Of Physics University Of Tsukuba
-
Kanemitsu Yoshihiko
The Institute For Solid State Physics The University Of Tokyo
-
Kanemitsu Yoshihiko
The Institute For Solid State Physics The University Of Tokyo:(present Address) Department Of Image
-
Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
-
Hasegawa Noboru
Electronics Research Laboratories Nippon Steel Corporation
-
Kanemitsu Y
Nara Inst. Sci. And Technol. Nara Jpn
-
Kanemitsu Y
Department Of Image Science And Technology Faculty Of Engineering Chiba University
-
Kanemitsu Yoshihiko
Institute For Chemical Research Kyoto University
-
MATSUMOTO Takahiro
Electronics Research Laboratories, Nippon Steel Corporation
-
MIMURA Hidenori
Electronics Research Laboratories, Nippon Steel Corporation
-
FUTAGI Toshiro
Electronics Research Laboratories, Nippon Steel Corporation
-
TAMAKI Teruyuki
Electronics Research Laboratories, Nippon Steel Corporation
-
UEDA Kenji
Electronics Research Laboratories, Nippon Steel Corporation
-
Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
-
Mimura Hidenori
Electronics Research Laboratories Nippon Steel Corporation
-
Mimura Hidenori
Research Institute Of Electrical Commnication Tohoku University
-
Mimura Hidenori
Graduate School Of Electric Science And Technology Shizuoka University
-
Matsumoto Takahiro
Electronics Research Laboratories Nippon Steel Corporation
-
Futagi T
Nippon Steel Corp. Kanagawa Jpn
-
Mimura H
Shizuoka University
-
Tamaki Teruyuki
Electronics Research Laboratories Nippon Steel Corporation
-
Mimura Hidenori
Electronics Reseach Laboratories Nippon Steel Corporation
-
Ueda Kenji
Electronics Research Laboratories Nippon Steel Corporation
-
Matsumoto Takuya
Isir Osaka Univ.
-
MIMURA Hidenori
Electronics R&D Laboratories, Nippon Steel Corporation
-
FUTAGI Toshiro
Electronics R&D Laboratories, Nippon Steel Corporation
関連論文
- Temporal Changes in Reflectivity of Crystalline Silicon in Picosecond Laser-Induced Melting
- Picosecond Dynamics of Pulsed Laser Annealing of Ion-Implanted Silicon
- Dynamical Aspects of Pulsed Laser Annealing of Ion-Implanted Silicon
- 3P-318 ビオチン-アビジン相互作用の分子認識力画像化(計測,第46回日本生物物理学会年会)
- Novel Spectral Imaging Method for Fizeau Interferometers
- Focusing Characteristics of Double-Gated Field-Emitter Arrays with a Lower Height of the Focusing Electrode
- Preparation and cathodoluminescence of nanostructured ZnO materials
- Electron emission from ferroelectric BaTiO_3
- Preparation and Cathodoluminescence of Nanostructured ZnO Materials
- Preparation and cathodoluminescence of nanostructured ZnO materials (電子ディスプレイ)
- Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630℃
- Control of Auger Recombination Rate in Si_Ge_x/Si Heterostructures
- Photo- and Electroluminescence from Electroehemically Polished Silicon
- Blue Light Emission from Rapid-Thermal-Oxidized Porous Silicon
- Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
- Hydrogen Termination and Optical Properties of Porous Silicon : Photochemical Etching Effect
- Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
- Characterization of Multilayered Structures by Piezoelectric Photoacoustic Imaging : Photoacoustic Effect and Spectroscopy
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses : Media
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses
- Reversible and Irreversible Spectral Shifts during Photoluminescence Blinking in a Single CdSe/ZnS Core/Shell Nanocrystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Photoinduced Effects on Gap State Profiles and Recombination Processes in Amorphous Selenium Studied by Photoacoustic Spectroscopy and Xerographic Discharge Measurements : Photoacoustic Spectroscopy
- Gap State Profiles in Amorphous Selenium Studied by Photoacoustic and Photoconductivity-Quenching Spectroscopy : Photoacoustic Spectroscopy
- Dynamics of Picosecond Laser-Generated Acoustic Waves in Solids : Photoacoustic Spectroscopy
- Surface Transformations in Glass Initiated by Laser-Driven Shock : High Power Ultrasonics
- Explosive Crystallization in Amorphous Silicon Induced by Picosecond High-Power Laser Pulses
- Photoluminescence Dynamics of Mn^-Doped CdS/ZnS Core/Shell Nanocrystals : Mn^ Concentration Dependence(Condensed matter : electronics structure and electrical, magnetic, and optical properties)
- 2P170 Protein biosynthesis by ribosomes immobilized on solid surfaces(35. RNA world,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Atomic Force Microscopic Observation of Escherichia coli Ribosomes in Solution
- Scanning Force Microscopic Studies of Escherichia coli Ribosomes on Solid Substrate Surface
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Structure of Tetragonal YBa_2Cu_3O_
- Structure of High-T_c Superconductor YBa_2Cu_30_ at Low Temperatures
- Identification of Phases in High T_c Oxide Superconductor Ba_Y_Cu_1O_x
- High-T_c Superconductor Ba_Y_Cu_1O_x
- Recent Transport Studies of High Temperature Superconductors at ISSP : II-D Transport Properties : II Oxide Superconductors; Experiments II : Electronic States
- A Mandala-Patterned Bandanna-Shaped Porphyrin Oligomer, C_H_N_Ni_O_ Having a Unique Size and Geometry
- One-step grown aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition
- Strong luminescence from dislocation-free GaN nanopillars
- 3P-068 原子間力顕微鏡による1分子相互作用測定のためのIL-6及びIL-6RのN末端固定法(蛋白質・計測,解析の方法論,第46回日本生物物理学会年会)
- 2P536 Surface potential measurement of DNA, protein, lipid membrane at real space imaging(52. Bio-imaging,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Imaging of the DNA (deoxyribonucleic acid) Double Helix Structure by Noncontact Atomic Force Microscopy
- Structure and Photoelectric Properties of Copper-phthalocyanine/Lead Telluride Multilayer Thin Film Prepared by Laser Ablation and Thermal Evaporation
- Electric Field and Contact Interactions of Tip with Adenine Molecules on SrTiO_3(100)-?×? Surfaces ( Scanning Tunneling Microscopy)
- Bias Dependence of Scanning Tunneling Microscopy Images of Sr Atoms Adsorbed on SrTiO_3(100)√×√ Surfaces
- Adsorption Structure of Copper-Phthalocyanine Molecules on a Si(100)2×1 Surface Observed by Scanning Tunneling Microscopy
- Epitaxial Growth of Bi_2Sr_2Cu_Ti_xO_y Thin Films on SrTiO_3 (100) and Bi_2Sr_2CaCu_2O_8 Single Crystals for Construction of Tunneling Barrier
- Scanning Tunneling Microscopic Study on the Initial Growth of Bi_2Sr_2CuO_6 Thin Films on SrTiO_3(001) by Laser Molecular Beam Epitaxy
- Surface Structure and Electronic Property of Reduced SrTiO_3(100) Surface Observed by Scanning Tunneling Microscopy/Spectroscopy
- Deep-Level Energy States in Nanostructural Porous Silicon
- Electroluminescence from Deuterium Terminated Porous Silicon
- Optical Properties of Small Silicon Clusters : Chain, Ladder and Cubic Structures
- Optical Properties of Porous Silicon and Small Silicon Clusters : Search for the Origin of Visible Photoluminescence of Porous Silicon
- Carbon Nanotube on a Si Tip for Electron Field Emitter : Instrumentation, Measurement, and Fabrication Technology
- Electron-beam-pumped Light Sources Using Graphite Nanoneedle Field Emitters and Si Electron-transparent Films
- Dependence of the Light Emission Characteristics on the Ne Gas Pressure in an Electron-beam-pumped Light Source Using a Field Emitter
- Transmission Electron Microscope Studies of Intergrowth in BiSrCaCu_2O_x and High-T_c Superconducting Phase : Electrical Properties of Condensed Matter
- Low Temperature Specific Heat and Electrical Resistivity in Orthorhombic YBa_2Cu_3O_ and Tetragonal YBa_2Cu_3O_
- Pressure Effects on T_c of Superconductor YBa_2Cu_4O_8
- The Phase Decomposition of YBa_2Cu_3O_ Induced by HIP
- Picosecond Laser Induced Rapid Crystallization in Amorphous Silicon
- Morphological Studies of Surface Transformations in Amorphous Silicon Induced by Picosecond Laser Pulses
- Polyimide Optical Waveguide with Multi-Fan-Out for Multi-Chip Module Application
- Polyimide Optical Waveguide with Multi-Fan-Out for Multi-Chip Module Application
- Study of NOx removal processes by microplasma generation (論文特集 2008年度静電気学会全国大会)
- Reduction of Long-range Interactions using Carbon Nanotube Probes in Biological Systems
- Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes
- Wedge-Shaped Silicon Emitter Fabricated by New Method
- Alignment Offset Analyzer against Wafer-Induced Shift
- Alignment Mark Optimization to Reduce Tool- and Wafer-Induced Shift for XRA-1000
- Photoluminescence from Deuterium Terminated Porous Silicon
- Deterioration of the Frequency-Conversion Efficiency of a LiTaO_3 Waveguide Device with Nonlinear Quasi-Phase-Matched Second-Harmonic Generation
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Quasi-Phase-Matched Second-Harmonic Generation in a Periodic-Lens Sequence Waveguide with a Relatively Wide Wavelength-Tuned Width
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction
- Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
- Amorphous Silicon Resistive Sea for Silicon Vidicon Targets
- Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer : Semiconductors and Semiconductor Devices
- Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer thickness and Growth Temperature : Semiconductors and Semiconductor Devices
- Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy
- Synthesis, Structures, and Reactivity of Kinetically Stabilized Anthryldiphosphene Derivatives
- Synthesis and Properties of 9-Anthryldiphosphene
- Smith-Purcell Radiation Using a Single-tip Field Emitter
- Structural and Emission Characteristics of Iron-Oxide Whiskers on a Steel Plate
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Photoluminescence from Silicon Quantum Crystallites : Core and Surface States
- Picosecond Luminescence Decay in Porous Silicon
- Formation of Periodic Ripple Structures in Picosecond Pulsed Laser Annealing of Ion-Implanted Silicon
- Photoluminescence Spectra and Dynamics of Al3+- and Ag+-Doped CdS Nanocrystals
- Multicarrier Recombination and Energy Transfer in Mn-Doped CdS Nanocrystals Studied by Femtosecond Pump–Probe Spectroscopy
- Blinking Behavior of Surface-Defect and Impurity Luminescence in Nondoped and Mn2+-Doped CdS Nanocrystals
- Long-Range Structural Changes in Glass Inducedby Picosecond High-Power Baser Pulses
- Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots
- Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures
- Molecular Design of Optical and Structural Properties of Organic Semiconductor Films : Thiophene-Based Oligomers
- Photoluminescence in Hydrogenated Amorphous Carbon Films Prepared at Room Temperature
- Determination of Phase Diagram of Electron--Hole Systems in 4H-SiC
- Dynamics of Quantized Auger Recombination in CdSe Nanocrystals Studied by Femtosecond Intraband Pump–Probe Spectroscopy