Recombination Dynamics of High-Density Photocarriers in Type-II Ge/Si Quantum Dots
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概要
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The optical properties and dynamics of charge carriers under high-density photoexcitation in type-II Ge/Si quantum dots (QDs) are studied by time-resolved photoluminescence (PL) measurements at low temperatures. Under high-density photoexcitation, the PL spectra showed a broad band with an extended, high-energy tail, representing a hot-carrier distribution over high-energy states. PL decay measurements revealed that a fast-decay component appeared under high-density photoexcitation, indicating that Auger recombination results in hot-carrier generation in Ge/Si QDs. Moreover, by comparing with thermally annealed Ge/Si QDs, we found that the Auger recombination rate is affected by Ge--Si intermixing at the Ge/Si interface.
- 2012-06-15
著者
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Kanemitsu Yoshihiko
Institute For Chemical Research Kyoto University
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Fukatsu Susumu
Graduate School Of Arts And Sciences The University Of Tokyo
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Tayagaki Takeshi
Institute For Chemical Research Kyoto University
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Tayagaki Takeshi
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
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UEDA Kei
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
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