Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures
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概要
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We report that nonradiative Auger recombination rate is suppressed in designed Si1-xGex/Si quantum wells (QWs). The photoluminescence intensity under high-density excitation depends strongly on the width of single QWs, and Auger recombination is more pronounced for wide wells. This dependence shows that Auger recombination rate depends on the probability of finding holes in a Si1-xGex well layer. A method of controlling nonradiative Auger recombination rate by wavefunction manipulation is discussed: in coupled double QWs, the wavefunction profile can be tuned by varying barrier width so as to reduce Auger recombination rate.
- 2010-01-15
著者
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Kanemitsu Yoshihiko
Institute For Chemical Research Kyoto University
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Fukatsu Susumu
Graduate School Of Arts And Sciences The University Of Tokyo
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Tayagaki Takeshi
Institute For Chemical Research Kyoto University
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