Determination of Phase Diagram of Electron--Hole Systems in 4H-SiC

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概要

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• We studied the photoluminescence (PL) spectrum and dynamics of highly dense electron--hole (e--h) systems of the wide- and indirect-gap semiconductor 4H-SiC. PL spectra near the critical temperature were complicated owing to excitons, e--h liquids, and e--h plasmas. We found that the PL from e--h liquids shows a rise time of several tens of picoseconds. From the e--h density and temperature dependence of the time-resolved PL spectra, we determined the phase diagram of the e--h system in 4H-SiC, which includes excitons, e--h liquids, and e--h plasmas.

• 2013-06-15

著者

• Kanemitsu Yoshihiko

  Institute For Chemical Research Kyoto University

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Hirano Daisuke

  Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan

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