Optical Properties of Porous Silicon and Small Silicon Clusters : Search for the Origin of Visible Photoluminescence of Porous Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-30

著者

• Kanemitsu Yoshihiko

  Institute Of Physics University Of Tsukuba

• Kanemitsu Yoshihiko

  The Institute For Solid State Physics The University Of Tokyo

• Kanemitsu Yoshihiko

  The Institute For Solid State Physics The University Of Tokyo:(present Address) Department Of Image

• Masumoto Y

  Univ. Tsukuba Ibaraki Jpn

• Matsumoto H

  Jst‐erato Tsukuba Jpn

• Masumoto Yasuaki

  Institute For Solid State Physics The University Of Tokyo

• MATSUMOTO Hideyuki

  Department of Chemical Engineering, Graduate School of Science and Engineering, Tokyo Institute of T

• Kanemitsu Y

  Nara Inst. Sci. And Technol. Nara Jpn

• Kanemitsu Y

  Department Of Image Science And Technology Faculty Of Engineering Chiba University

• Kanemitsu Yoshihiko

  Institute For Chemical Research Kyoto University

• KYUSHIN Soichiro

  Department of Applied Chemistry, Faculty of Engineering, Gunma University

• HIGUCHI Koichi

  Department of Applied Chemistry, Faculty of Engineering, Gunma University

• Suzuki Katsunori

  Institute of Physics, University of Tsukuba

• UTO Hiroshi

  Institute of Physics, University of Tsukuba

• Matsumoto Hideyuki

  Department Of Applied Chemistry Faculty Of Engineering Gunma University

• Uto H

  Univ. Tsukuba Ibaraki Jpn

• Uto Hiroshi

  Institute Of Physics University Of Tsukuba

• Higuchi K

  Department Of Applied Chemistry Faculty Of Engineering Gunma University

• Suzuki K

  Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn

• Kyushin S

  Department Of Applied Chemistry Faculty Of Engineering Gunma University

• Kyushin Soichiro

  Department Of Applied Chemistry Faculty Of Engineering Gunma University

• Morishita Hiroaki

  Department Of Chemistry School Of Science Kwansei Gakuin University

関連論文

• Temporal Changes in Reflectivity of Crystalline Silicon in Picosecond Laser-Induced Melting
• Picosecond Dynamics of Pulsed Laser Annealing of Ion-Implanted Silicon
• Dynamical Aspects of Pulsed Laser Annealing of Ion-Implanted Silicon
• Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Confined Acoustic Vibration Modes in CuBr Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
• Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
• Pattern analysis of viscous oscillation in a shear flow induced by an exothermic reaction
• Structure Identification of Adaptive Network Model for Intensified Semibatch Process
• Control of Auger Recombination Rate in Si_Ge_x/Si Heterostructures
• Photo- and Electroluminescence from Electroehemically Polished Silicon
• Blue Light Emission from Rapid-Thermal-Oxidized Porous Silicon
• Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
• Hydrogen Termination and Optical Properties of Porous Silicon : Photochemical Etching Effect
• Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
• Characterization of Multilayered Structures by Piezoelectric Photoacoustic Imaging : Photoacoustic Effect and Spectroscopy
• Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses : Media
• Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses
• Reversible and Irreversible Spectral Shifts during Photoluminescence Blinking in a Single CdSe/ZnS Core/Shell Nanocrystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Photoinduced Effects on Gap State Profiles and Recombination Processes in Amorphous Selenium Studied by Photoacoustic Spectroscopy and Xerographic Discharge Measurements : Photoacoustic Spectroscopy
• Gap State Profiles in Amorphous Selenium Studied by Photoacoustic and Photoconductivity-Quenching Spectroscopy : Photoacoustic Spectroscopy
• Dynamics of Picosecond Laser-Generated Acoustic Waves in Solids : Photoacoustic Spectroscopy
• Surface Transformations in Glass Initiated by Laser-Driven Shock : High Power Ultrasonics
• Explosive Crystallization in Amorphous Silicon Induced by Picosecond High-Power Laser Pulses
• Photoluminescence Dynamics of Mn^-Doped CdS/ZnS Core/Shell Nanocrystals : Mn^ Concentration Dependence(Condensed matter : electronics structure and electrical, magnetic, and optical properties)
• Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type -IIAl_xGa_As/AlAs Multiple-Quantum-Well Structures
• Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
• Optical Study of Strain-Induced GaAs Quantum Dots
• Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
• Selective Si-Si Bond Cleavage of Decaisopropylbicyclo[2.2.0]hexasilane with Hydrobromic Acid and Hydrochloric Acid
• Nanostructures of Hydrogen- and Deuterium-Terminated Porous Silicon (Proceedings of the 1st International Symposium on Advanced Science Research(ASR-2000), Advances in Neutron Scattering Research)
• Synthesis, Structure, and Reactions of Octakis(1,1,2-trimethylpropyl)octagermacubane
• Deep-Level Energy States in Nanostructural Porous Silicon
• Highly Planar Silane[(i-Pr)_3Si]_3SiH and Silyl Radical[(i-Pr)_3Si]_3Si・
• Electroluminescence from Deuterium Terminated Porous Silicon
• Structure and Unusual Electronic Spectra of Decaisopropyl-7-oxabicyclo[2.2.1]heptasilane
• Optical Properties of Small Silicon Clusters : Chain, Ladder and Cubic Structures
• anti-1,2,5,6-Tetra-tert-butyl-,3,3,4,4,7,7,8,8-octaisopropyltricyclo[4.2.0.0^]octasilane
• Optical Properties of Porous Silicon and Small Silicon Clusters : Search for the Origin of Visible Photoluminescence of Porous Silicon
• 1.5-μm Intraband Transitions in PbSe Quantum Dots
• Stereochemistry of Protected Ornithine Side Chains of Gramicidin S Derivatives : X-ray Crystal Structure of N-Methylated Derivative of Gramicidin S
• Dynamical Aspects of Self-Trapping of 1s Excitons in RbI and KI
• Dynamical Aspects of Self-Trapping of 1s Excitons in KI
• Picosecond Spectroscopy of Excitonic Molecules in CuBr
• Picosecond Time of Flighi Measurements of Excitonic Polariton in CuCl
• Millisecond-Range Electron Spin Memory in Singly-Charged InP Quantum Dots(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
• Picosecond Laser Induced Rapid Crystallization in Amorphous Silicon
• Morphological Studies of Surface Transformations in Amorphous Silicon Induced by Picosecond Laser Pulses
• Thermal Isomerization of Silicon and Germanium Sesquichalcogenides, Thex_4M_4E_6(M=Si, Ge; E=S, Se)
• Excited-state Property of 1-(4-Cyanophenyl)-2-(4-methoxyphenyl)-1,1,2,2-tetramethyldisilane
• Enhancement of Singlet Oxygen Sensitization of Tetraphenylporphyrin by Silylation
• Yellow-green Fluorescence of 5,11- and 5,12-Bis(diisopropylsilyl)naphthacenes
• 2, 3, 6, 7, 10, 11-Hexakis(dimethylsilyl)triphenylene
• Persistent Spectral Hole Burning Phenomenon of Semiconductor Nanocrystals : Observation, Mechanism and Application
• Dibenzo[c,h]-1,6-diisopropyl-1,6-disilabicyclo[4.4.0]deca-3,8-dienes
• Ring-Opening Reactions of anti-Dodecaisopropyltricyclo [4. 2. 0. 0^] octasilane. Formation of Novel Bicyclo [3. 3. 0] octasilane and Bicyclo [4. 2. 0] octasilane Systems
• Selective Si-Si Bond Cleavage in Decaisopropylbicyclo[2.2.0]hexasilane. A Route to Sterically Hindered 1, 4-Dichlorocyclohexasilanes
• Persistent Tris (t-butyldimethylsilyl) silyl Radical and Its New Generation Methods
• Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
• Observation of Excited Biexciton States in CuCl Quantum Dots : Control of the Quantum Dot Energy by a Photon ( Quantum Dot Structures)
• Highly Efficient Persistent Hole-Burning in Cuprous Halide Quantum Dots
• Picosecond Repetitive Optical Switching Using Type II AlGaAs/AlAs Multiple Quantum Well Structures
• Photostimulated Luminescence of CuCl Quantum Dots in NaCl Crystals
• Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
• Persistent Spectral Hole-Burning in CuCl Nanocrystals : Demonstration of Optical Data Storage
• Synthesis, Structures, and Reactivity of Kinetically Stabilized Anthryldiphosphene Derivatives
• Synthesis and Properties of 9-Anthryldiphosphene
• Reduced Lasing Threshold in Thiophene/Phenylene Co-Oligomer Crystalline Microdisks
• Persistent Spectral-Hole-Burning in Semiconductor Quantum Dots and its Application to Spectroscopy
• Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon
• Characterizations of Simultaneously Fabricated Silicon and Silicon Monoxide Nanowires : Semiconductors
• Demonstration of Frequency-Domaim Optical Data Storage of CuCl Semiconductor Nanocrystal Systems
• Observation of Excited State Excitons in CuCl Quantum Cubes ( Quantum Dot Structures)
• Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
• Ultrafast and Wideband Response in Optical Nonlinearity of Molecular-Beam-Epitaxy-Grown GaAs : Semiconductors
• 1, 2, 3-Triphenyl- 1, 2, 3-trithexylcyclotrisilanes : Synthesis and Ring-Opening by Halogens
• cis-trans-cis-Tetrabromotetramethylcyclotetrasiloxane : a Versatile Precursor of Ladder Silsesquioxanes
• Synthesis of Ladder and Cage Silsesquioxanes from 1,2,3,4-Tetrahydroxycyclotetrasiloxane
• The Cyclo[(disilanylene)(butadiyne)]s [(i-Pr)_2Si(i-Pr)_2SiC≡CC≡C]_n (n=2-4)
• Synthesis and Crystal Structures of Silapericyclynes
• Extended Silapericyclynes
• Optical Study of Al_xGa_1-_xAs-AlAs Ternary Alloy Multi-Quantum-Well Structures around Two Γ-X Crossovers
• Photoluminescence from Silicon Quantum Crystallites : Core and Surface States
• Nonlinear Luminescence Spectroscopy of Excitons in GaAs-AlAs Quantum Wells
• Formation of Periodic Ripple Structures in Picosecond Pulsed Laser Annealing of Ion-Implanted Silicon
• Observation of New Isoelectronic Trap Luminescence in Nitrogen $\delta$-Doped GaP
• Exciton Spin Stability in InP Quantum Dots at the Elevated Temperatures
• Long-Range Structural Changes in Glass Inducedby Picosecond High-Power Baser Pulses
• One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires
• Ultrafast Optical Nonlinearities in Highly Excited GaAs Multiple Quantum Wells
• Single Photon Emission from Individual Nitrogen Pairs in GaP
• Optical Study of Strain-Induced GaAs Quantum Dots
• Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs
• Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
• 1.5-μm Intraband Transitions in PbSe Quantum Dots
• Observation of Excited State Excitons in CuCl Quantum Cubes
• Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
• 30aCD-7 Ultrafast carrier dynamics in CuInS_2 quantum dots

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