Source of surface morphological defects formed on 4H-SiC homoepitaxial films
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概要
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Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H–SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2. From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)$\langle 4\bar{4}03\rangle$ type.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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YAMAGUCHI Makoto
Japan Society for Promotion of Machine Industry
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Tomita Takuro
Department Of Ecosystem Engineering The University Of Tokushima
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Matsuo Shigeki
Department Of Ecosystem Engineering Graduate School Of Engineering The University Of Tokushima
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Tomita Takuro
Department of Ecosystem Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Ochi Kengo
Graduate Student, Department of Mechanical Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Kawahara Hiroyuki
Graduate Student, Department of Mechanical Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Higashimine Kouichi
Center for Nano Materials and Technology, JAIST, Nomi, Ishikawa 923-1292, Japan
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Matsuo Shigeki
Department of Ecosystem Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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Okada Tatsuya
Department of Mechanical Engineering, The University of Tokushima, Tokushima 770-8506, Japan
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