4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C
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概要
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4H-SiC pn photodiodes were fabricated and the temperature dependence of the photoresponse was measured for various wavelengths (280--365 nm) as a function of reverse-bias voltage. A temperature-independent photoresponse was obtained at 280 nm illumination from room temperature to 300 °C under zero-bias condition. By applying reverse-bias voltage up to 150 V, the wavelength of the temperature-independent photoresponse was varied from 280 to 300 nm. The temperature-independent photoresponse was explained by the temperature dependence of optical absorption coefficient together with surface recombination effect.
- 2012-09-25
著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Watanabe Naoki
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Kimoto Tsunenobu
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Watanabe Naoki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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