Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
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概要
- 論文の詳細を見る
Pn diodes with a planar structure were fabricated by acceptor-ion implantation into 4H–silicon carbide (SiC) ($11\bar{2}0$). The ($11\bar{2}0$) diode exhibited an on-resistance of 13.5 m$\Omega$cm2 and could block 1850 V. The width of intrinsic layers formed near the junction interface was analyzed using a model originally developed by the authors. The forward characteristics of the ($11\bar{2}0$) diodes were negligibly deteriorated during a long-term stress measurement at a constant current density of 100 A/cm2 for 3 h, although most diodes fabricated using (0001) were degraded abruptly and irreversibly. This characteristic is very attractive for robust bipolar SiC devices using the ($11\bar{2}0$) face.
- 2004-02-15
著者
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Negoro Yuuki
Department Of Electronic Science And Engineering Kyoto University
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University, 1 Kyotodaigaku-katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Kimoto Tsunenobu
Department of Electronic Science and Engineering, Kyoto University, 1 Kyotodaigaku-katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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