Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)

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概要

• 論文の詳細を見る

• Spiral growth by chemical vapor deposition (CVD) on 6H-SiC (0001) has been investigated by atomic force microscopy (AFM). The carbon-to-silicon (C/Si) ratio for CVD strongly affects the shape of spiral hillocks. The change in shape originates from the change in the relative rates of spiral growth and step-flow growth: a high C/Si ratio enhances spiral growth, while a low C/Si ratio enhances step-flow growth.

• Japan Society of Applied Physicsの論文
• 2003-07-15

著者

• NAKAMURA Shun-ichi

  Department of Biochemistry, Kobe University School of Medicine

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan

• Nakamura Shun-ichi

  Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan

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