Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Matsunami H
Kyoto Univ. Kyoto Jpn
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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OKA Tohru
Department of Electrical Engineering, Kyoto University
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Oka T
Nagaoka Coll. Technol. Niigata Jpn
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
関連論文
- Electrical activation of high-concentration aluminum implanted in 4H-SiC
- Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
- 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
- Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(Heterostructure Microelectronics with TWHM2003)
- Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
- Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
- Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
- Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces
- Anisotropy in breakdown field of 4H-SiC
- High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
- Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)
- Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
- Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
- Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's
- Performance limiting surface defects in SiC epitaxial p-n junction diodes
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Carrier Injection/Transport Characteristics of Photochromic Diarylethene Film : Surfaces, Interfaces, and Films
- Solution Electrochemiluminescent Cell with a High Luminance Using an Ion Conductive Assistant Dopant Optics and Quantum Electronics
- Solution Electrochemiluminescent Cell Using Tris(phenylpyridine) Iridium : Optics and Quantum Electronics
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- LOCALIZATION OF SUDANOPHIL MATERIAL AT THE SITES OF CALCIFICATION IN DENTINE. AND THE COMPACT BONE AND EPIPHYSEAL CARTILAGE PLATE OF TIBIA IN THE RAT GIVEN BERYLLIUM CARBONATE
- Immunocytochemical observation of secretory IgA (sIgA) components in the human minor salivary glands.
- Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Robust 4H-SiC pn Diodes Fabricated using (1120) Face
- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
- Recent Progress in Epitaxial Growth of SiC for Power Devices
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
- GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
- High-Quaity AIN by Initia ayer-by-ayer Growth on Surface-Controed 4H-SIC(0001)Substrate
- Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
- Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
- Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
- A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
- Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- SiO_2 Film Deposition by KrF Excimer Laser Irradiation
- Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
- Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
- Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
- Reliability of Low Temperature Poly-Si GOLD (Gate-Overlapped LDD) Structure TFTs(Special Issue on Electronic Displays)
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- Scope and Vision on the Solar Photovoltaic R & D : IV: PANEL DISCUSSION