Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

• 論文の詳細を見る

• Hetero-interface properties of SiO_2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Science and Engineering, Kyoto University

• KIMOTO Tsunenobu

  Science and Engineering, Kyoto University

• YANO Hiroshi

  Science and Engineering, Kyoto University

• Kimoto T

  Kyoto Univ. Kyoto Jpn

• Yano H

  Kyoto Univ. Kyoto‐shi Jpn

• Kimoto Tsunenobu

  Science And Engineering Kyoto University

• Yano H

  Science And Engineering Kyoto University:(present Address) Graduate School Of Materials Science Nara

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University

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