Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method

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概要

• 論文の詳細を見る

• a-Si:H films are deposited by direct photochemical vapor deposition using a vacuum ultraviolet light (147 nm) emitted from a microwave-excited Xe resonance lamp. The hydrogen concentration is estimated to be less than 9 at.% for deposition temperatures ranging from 200 to 300℃. The hydrogen bonding configuration is mainly Si-H. Defect densities estimated from below-gap absorption coefficients reach 2.2×10^<15>cm^<:-3>. Mobility-gap E_μ measured using an internal phtoemission method is about 1.8 eV, which is 0.05 eV lager than its optical gap E_<opt> of 1.75 eV. The difference between E_μ and E_<opt> is smaller than that of conventional GD films, which suggests that localized state densities at the band edges are lower.

• 社団法人応用物理学会の論文
• 1991-04-01

著者

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• FUYUKI Takashi

  Department of Electrical Engineering, Kyoto University

• Fuyuki Takashi

  Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University

• YOSHIMOTO Masahiro

  Department of Electrical Engineering, Kyoto University

• Yoshimoto Masahiro

  Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University

• Yoshimoto Masahiro

  Department Of Electrical Engineering Kyoto University

• SHIRAFUJI Tatsuru

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Yoshimoto M

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Fuyuki T

  Nara Inst. Sci. And Technol. Nara Jpn

• Yoshimoto M

  Kyoto Inst. Technol. Kyoto Jpn

• Fuyuki Takashi

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Shirafuji Tatsuru

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Fujii Tadashi

  the Graduate School of Materials Science, Nara Institute of Science and Technology

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