Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Silicon carbide (SiC) blue-light-emitting diodes with an external quantum efficiency of 2×10^<-5> photons/electron were prepared by the chemical vapor deposition method. Epitaxial growth of 6H-SiC has been carried out at 1800℃ on a 6H-SiC substrate using the SiCl_4-C_3H_8-H_2 system. Epitaxial layers of the n and p types with appropriate carrier concentrations were obtained by doping N from NH_3 and Al from AlCl_3, respectively. A pn junction was prepared in one growth run by a double epitaxial process. The peak wavelength of the electroluminescence spectrum was 495 nm.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Tanaka Tetsuro
Department Of Electronics Faculty Of Engineering Kyoto University
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Tanaka Tetsuro
Department Of Electrical And Electronics Engineering Kagoshima University
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Nishino Shigehiro
Department Of Electronics Faculty Of Engineering Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electronics Faculty Of Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Ibaraki Akira
Department Of Electronics Faculty Of Engineering Kyoto University
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Tanaka Tetsuro
Department Of Biopharmaceutics School Of Pharmacy Fukuyama University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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