Fuyuki Takashi | Department Of Eectrical Engineering Kyoto University

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概要

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著作論文

Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
Photo-Ionization of Aluminum Atoms by Vacuum Ultra Violet Light
Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
Analysis of Electron Beam Induced Current Considering Sample Dimensions : Measurement of Diffusion Length and Surface Recombination Velocity
Plasma Anodic Oxidation of InP
Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
Electronic Properties of the Interface between Si and TiO_2 Deposited at Very Low Temperatures
Structural and Optical Properties of Polycrystalline Silicon Thin Films Deposited by the Plasma Enhanced Chemical Vapour Deposition Method

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