Fuyuki Takashi | Department Of Eectrical Engineering Kyoto University
スポンサーリンク
概要
関連著者
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University
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Yoshinobu Tatsuo
Department Of Electrical Engineering Kyoto University:(present Address) The Institute Of Scientific
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Yoshinobu T
Osaka Univ. Osaka Jpn
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SAITOH Takashi
Department of Anesthesiology, University of the Ryukyus
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KOMATSU Yuji
Department of Electrical Engineering, Kyoto University
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HATAYAMA Tomoaki
Department of Electronic Science and Engineering, Kyoto University
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OKA Tohru
Department of Electrical Engineering, Kyoto University
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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Oka T
Nagaoka Coll. Technol. Niigata Jpn
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Komatsu Y
Functional Devices Research Laboratories Nec Corporation
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Hatayama T
Ion Engineering Res. Inst. Corp. Osaka Jpn
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Saitoh T
Forestry And Forest Products Res. Inst. Sapporo Jpn
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Komatsu Yuji
Department Of Chemistry And Biotechnology Graduate School Of Engineering Tottori University
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Saitoh Takashi
Department Of Anesthesiology University Of The Ryukyus
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Aizawa Kouichi
Department Of Integrated Biosciences Graduate School Of Frontier Sciences The University Of Tokyo:sa
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Aizawa Kouichi
Department Of Electrical Engineering Kyoto University
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Du Kai-ying
Department Of Electrical Engineering Kyoto University
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MITSUI Hideaki
Department of Electrical Engineering, Kyoto University
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TARUI Yoichiro
Department of Electrical Engineering, Kyoto University
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Nakamura Kazuhiro
Department of Neurosurgery, Mito Medical Center
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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HOSOTANI Keiji
Department of Electrical Engineering, Kyoto University
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FUJII Tadashi
Department of Electronic Science and Engineering, Faculty of Engineering, Kyoto University
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SHIRAFUJI Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology
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Hosotani Keiji
Department Of Electrical Engineering Kyoto University
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Fuyuki Takashi
Department Of Electronics Faculty Of Engineering Kyoto University
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Fuyuki Takashi
Department Of Electrical Engineering Kyoto University
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Moriuchi Sohta
Department Of Electrical Engineering Kyoto University
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Fuyuki Takashi
Department Of Electronic Science And Engineering Kyoto University
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Shirafuji Tatsuru
Department Of Electrical Engineering Kyoto University
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Fujii Tadashi
Department Of Botany Faculty Of Science Tokyo University Of Education
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Nakamura Kazuhiro
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Kazuhiro
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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ZHU Furong
Department of Eectrical Engineering, Kyoto University
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KOHARA Hajime
Department of Eectrical Engineering, Kyoto University
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Zhu Furong
Department Of Eectrical Engineering Kyoto University
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Kohara H
Osaka Univ. Osaka Jpn
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MATSUNAMI Hiroyuki
Department of Electrical Engineering, Kyoto University
著作論文
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Photo-Ionization of Aluminum Atoms by Vacuum Ultra Violet Light
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Analysis of Electron Beam Induced Current Considering Sample Dimensions : Measurement of Diffusion Length and Surface Recombination Velocity
- Plasma Anodic Oxidation of InP
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- Electronic Properties of the Interface between Si and TiO_2 Deposited at Very Low Temperatures
- Structural and Optical Properties of Polycrystalline Silicon Thin Films Deposited by the Plasma Enhanced Chemical Vapour Deposition Method