Electronic Properties of the Interface between Si and TiO_2 Deposited at Very Low Temperatures
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概要
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Uniform TiO_2 thin films with a large ε_r (up to 86) were prepared at low temperatures (200-400℃) by CVD. The films deposited at 200℃ were amorphous and those at high temperatures were polycrystalline structures of anatase. The electronic properties of a TiO_2/Si interface were analyzed in detail using metal-insulator-semiconductor structures. The minimum interface state density in the bandgap was as low as 2×10^<11> cm^<-2>eV^<-1>, showing the usefulness of the TiO_2 films for the gate insulators of MIS diodes. An anomalous behavior of photo-induced current observed for the first time is also presented.
- 社団法人応用物理学会の論文
- 1986-09-20
著者
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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