Cd_3As_2 Thin Film Magnetoresistor
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概要
- 論文の詳細を見る
A magnetoresistor is fabricated by using a thin film of n-type Cd_3As_2. The Hall mobility is constant below 200゜K in most of thin films, and in some films below 300゜K. The geometry of a device has an important effect on the magnetoresistance. The resistance of this magnetoresistor at zero magnetic field is 190Ω. The magnetoresistance changes according to B^2 up to 1 Wb/m^2. The resistance change of 4Ω is obtained at 0.5 Wb/m^2. The magnetoresistance sensitivity is 0.7 m^4Ω/Wb^2. The Cd_3As_2 thin film magnetoresistor has the following advantages: 1) it can be easily prepared by the usual evaporation method; 2) this device has no temperature dependence below 200゜K in most cases, and in some cases below room temperature.
- 社団法人応用物理学会の論文
- 1971-05-05
著者
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Tanaka Tetsuro
Department Of Electrical Engineering Kyoto University
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Tanaka Tetsuro
Department Of Biopharmaceutics School Of Pharmacy Fukuyama University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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MATSUNAMI Hiroyuki
Department of Electrical Engineering, Kyoto University
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