Electrical Properties of Undoped p-CdSb at Low Temperatures

スポンサーリンク

概要

• 論文の詳細を見る

• The Hall effect and the resistivity of undoped p-CdSd were measured in the temperature range between 2°K and 300°K, and also the magnetoresistance effect at 2°K and 4.2°K. The anisotropies were observed in the magnitude of the Hall mobility and its temperature dependence. The intermediate type of the impurity conduction occurs in the concentration range between 2.5×10^<15>cm^<-3>. The remarkable magnetic field dependences of the Hall coefficient and the magnetoresistance were observed at 4.2°K in the intermediate concentration range. The observed magnetoresistance was found to be consist of three components. One is a negative component which saturates at high magnetic fields. The others are two positive components, one of which is due to the change of the activation energy by the magnetic field, and the other is the contribution of two kinds of holes. A negative magnetoresistance was observed at 2°K in samples with the acceptor concentration higher than 2×10^<15>cm^<-3>.

• 社団法人日本物理学会の論文
• 1969-12-05

著者

• Tanaka Tetsuro

  Department Of Electrical And Electronics Engineering Kagoshima University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Nishihara Yoshikazu

  Department Of Electrical Engineering Kyoto University:(present Address) Electrotechnical Laboratory

• Tanaka Tetsuro

  Department Of Electrical Engineering Kyoto University

• Tanaka Tetsuro

  Department Of Biopharmaceutics School Of Pharmacy Fukuyama University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• TANAKA Tetsuro

  Department of Electrical Engineering, Kyoto University

• MATSUNAMI Hiroyuki

  Department of Electrical Engineering, Kyoto University

関連論文

• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
• Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
• Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
• Deep Interface States in SiO_2/p-type α-SiC Structure
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
• High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
• High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
• Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
• Non-Ohmic and Oscillatory Behaviors at Strong Electric Field in Tellurium
• Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
• Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
• Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
• Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
• Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
• Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
• Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
• Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
• Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
• Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
• Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
• Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
• Optical Energy Gap of the Mixed Crystal CdS_xTe_
• Phase Diagram of the CdS-CdTe Pseudobinary System
• Uptake of Pullulan in Cultured Rat Liver parenchymal Cells(Biopharmacy)
• Receptor Mediated Endocytosis and Cytotoxicity of Trandferrin-Mitomycin C Conjugate in the HepG2 Cell and Primary Cultured Rat Hepatocyte
• Intracellular Disposition and Cytotoxicity of Transferrin-Mitomycin C Conjugate in HL60 Cells as a Receptor-Mediated Drug Targeting System
• Polysaccharides as Drug Carriers : Biodisposition of Fluorescein-Labeled Dextrans in Mice
• Synthesis of Transferrin-Mitomycin C Conjugate as a Receptor-Mediated Drug Targeting System
• Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
• Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
• Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
• Anisotropic Piezoresistance of Cadmium Antimonide
• Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
• Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
• Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
• Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
• A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
• Se Film Piezoelectric Transducer Deposited on Te Crystal
• Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
• Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
• Epitaxial Growth of Cd_xHg_Te
• Testing the Controllability of Discrete-Time Linear Systems with Input Constraints
• Positive Controllability Test of Discrete-Time Linear Systems
• Controllability of Multiple Input Discrete-Time Linear Systems with Positive Controls
• Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• SiO_2 Film Deposition by KrF Excimer Laser Irradiation
• Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
• Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
• Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
• Plasma Etching of CVD Grown Cubic SiC Single Crystals
• Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
• Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
• Piezoelectric Properties of Se Film Deposited on Te Crystal
• Photo-Ionization of Aluminum Atoms by Vacuum Ultra Violet Light
• Evaluation of Child Care Practice Factors That Affect the Occurrence of Sudden Infant Death Syndrome : Interview Conducted by Public Health Nurses
• Composition Dependence of Inhomogeneous Hydrogen Bonding Structures in a-SiGe:H
• Lattice-Matched LPE Growth of In_Ga_xP_As_y Layers on (100) GaAs Substrates
• Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide
• Preparation of a High Mobility Thin Film of Cd_3As_2
• Solid-State Phase Transformation in Cubic Silicon Carbide
• Thermal Oxidation of SiC and Electrical Properties of Al-SiO_2-SiC MOS Structure
• The Electrooptic Effect in Cubic ZnSe at 10.6 μ
• Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
• New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells
• Epitaxial Growth of CdTe by a Close-Spaced Technique
• Ultrasonic Amplification in Tellurium
• Current Oscillation in Tellurium at High Electric Field
• Temperature Dependence of Nonlinear V-I Characteristic in Tellurium
• Electrical Properties of Undoped p-CdSb at Low Temperatures
• Negative Magnetoresistance in Ag Doped p-CdSb
• New Blue Photoluminescence of Ga-Doped 4H-SiC Grown from Si Melt
• Photoluminescence of 4H-SiC Single Crystals Grown from Si Melt
• Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method
• Defect Luminescence in SiC Light-Emitting Diodes
• Fundamental Properties of MIS Solar Cells : I-2: SILICON SOLAR CELLS (II)
• MIS Silicon Solar Cells with In_2O_3 Antireflective Coating
• Plasma-Grown Oxide on InP
• Piezoelectric Effects in Selenium Rectifiers
• Current Oscillation in Dark-Conductive CdS
• GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique
• Analysis of Electron Beam Induced Current Considering Sample Dimensions : Measurement of Diffusion Length and Surface Recombination Velocity

もっと見る 閉じる

スポンサーリンク