New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells

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概要

• 論文の詳細を見る

• In order to extract electrical properties of multicrystalline silicon (Mx-Si) solar cells precisely, current–voltage ($I$–$V$) measurement in the dark condition was carried out. A new two-diode model, which includes a diffusion-current dominant area (DCA) and a recombination-current dominant area (RCA), with nonequivalent series resistances, was proposed as a new equivalent circuit. Electrical properties as fitting parameters were successfully extracted using a successive approximation method. This characterization derived $J_{01}$ and $J_{02}$, which are the diode saturation current densities for $n=1$ and 2 diodes, respectively. To ensure this diode model, temperature characteristics were measured, and the validity of this model was shown through calculation of the energy band gap from $J_{01}$. $J_{01}$ and $J_{02}$ indicate a power factor and a loss factor of solar cells, respectively, which are newly proposed to classify solar cell performance.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-12-15

著者

• Kurobe Ken-ichi

  Department Of Electronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

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