Structural and Optical Properties of Polycrystalline Silicon Thin Films Deposited by the Plasma Enhanced Chemical Vapour Deposition Method

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概要

• 論文の詳細を見る

• Polycrystalline silicon (Si) films have been deposited on both Si and foreign substrates by the plasma enhanced chemical vapour deposition (PECVD) method. Structural properties of Si filrns were characterised by X-ray diffraction (XRD) and Raman scattering measurements. These films show (110) preferred orientation. Their optical properties were measured by a spectrophotometer over tlte wavelerngth range 0.4 to 1.2 μm. Optical constants of Si films were calculated using the optical admittance method. The crystallinity of the films prepared at different temperatures is investigated by Raman scattering measturements and the two-phase mixture approximation. Results reveal that over 90% of the Si was in a polycryslalline structure in the films whern the deposition temperature was over 80O℃.

• 社団法人応用物理学会の論文
• 1996-06-15

著者

• Fuyuki Takashi

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• ZHU Furong

  Department of Eectrical Engineering, Kyoto University

• KOHARA Hajime

  Department of Eectrical Engineering, Kyoto University

• Zhu Furong

  Department Of Eectrical Engineering Kyoto University

• Kohara H

  Osaka Univ. Osaka Jpn

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