Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide

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概要

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• N-type Cd_3As_2 single crystals are prepared by a modified sublimation method, and their galvanomagnetic properties are measured above 2 K. The Hall coefficient is constant from 2 to 300 K, and no anisotropy is observed. The Hall mobility is constant below 15 k and then decreases gradually with increasing temperature. Conduction carriers are degenerate and scattered by both ionized impurities and the acoustical lattice vibration below 300 K. The resistance increment (Δρ/ρ_0)^<010>_<001> due to the magnetoresistance effect approaches 14 at 23,000 gauss, and not yet saturates. The longitudinal magnetoresistance coefficient M^<001>_<001> is nearly equal to zero in samples with carriers of 3×10^<18>/cm^3 and does not vanishin samples with carriers of 1×10^<18>/cm^3. A simple ellipsoidal energy band is proposed for the former, and an n-germanium type band structure is proposed for the latter. The longitudinal magnetoresistance is not zero for samples with carriers of 1×10^<19>/cm^3.

• 社団法人日本物理学会の論文
• 1971-09-05

著者

• Tanaka Tetsuro

  Department Of Electrical And Electronics Engineering Kagoshima University

• Iwami Motohiro

  Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Tanaka Tetsuro

  Department Of Biopharmaceutics School Of Pharmacy Fukuyama University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• MATSUNAMI Hiroyuki

  Department of Electrical Engineering, Kyoto University

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