Low-Temperature Ti-Silicide Forming Reaction in Very Thin Ti-SiO_2/Si(111) Contact Systems
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概要
- 論文の詳細を見る
Very thin (≦4 nm) titanium films were deposited on Si(11) surfaces with very thin (1-4nm) oxide, SiO_2 layers on topin a UHV system at room temperature. Ti-films with oxygen inclusion did not react at room temperature, but annealing at ≦350℃ induced the formation of a TiSi_2 layer between the Ti-film and the SiO_2-layer. On the other hand, Ti-film without oxygen inclusion induced a small but definite SiO_2-reducing reaction at the Ti-SiO_2. interfaces even at room temperature. The amount, or thickness, of the TiSi_2. layers formed between the Ti- and SiO_2.-layers could be controlled by varying either the amount of titanium deposited or the annealing temperature.
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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IWAMI Motohiro
Department of Electrical Engineering, Osaka University
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Iwami M
Department Of Electrical Engineering Osaka University
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Iwami Motohiro
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng
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