Thermal Stability of Electron Field Emission from Polycrystalline Diamond Film(Special Issue on Field Electron Emission from Carbon Materials)
スポンサーリンク
概要
- 論文の詳細を見る
Electron field emission from polycrystalline diamond films has been investigated. Electron emission was measured locally at randomly chosen point on a diamond film fabricated by a microwave plasma chemical deposition method. In the original film, there were some points with a large emission curent where flaws were found after the measurements, some points with a small and stable emission current without any flaw, and the other points, with no emission. At the point of no emission, the film was electrically broken down by applying a high voltage. After the intentional breaking down, a small and stable emission always appeared there with no flaw. The maximum emission current extracted from an emission site was usually 1 μA with no structural flaw found after the measurements. By using a simple model of emission site consisting of a core conductor embedded in insulator, the limitation of emission current is estimated from heating by the current and heat transfer to the insulator.
- 社団法人電子情報通信学会の論文
- 2003-05-01
著者
-
HATTA Akimitsu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
-
Hiraki Akio
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
-
SUMITOMO Taku
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
-
INOMOTO Hideo
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
-
Sumitomo Taku
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
-
Inomoto Hideo
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
-
Hatta A
Department Of Electronic And Photonic Systems Engineering Kochi University Of Technology
-
Hatta Akimitsu
Department Of Electrical Engineering Osaka University:(present Address)department Of Electronic And
関連論文
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition
- Comparative Study on Chemical Vapor Deposition of Diamond-Like Carbon Films from Methane and Acetylene Using RF Plasma
- Comparison of Properties of Diamond Nanowhiskers Obtained by Etching Diamond Films with Different Metal Coatings in Radio Frequency Plasma
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Reduced risk of endometrial cancer from alcohol drinking in Japanese
- Calcineurin Inhibitor-Induced Irreversible Neuropathic Pain after Allogeneic Hematopoietic Stem Cell Transplantation
- Sensitive Detection of Hydrogen in a-Si: H by Coincidence Measurement of Elastically Scattered 100 MeV ^3He^ Ions and Recoil Protons
- Effects of Plasma Potential on Diamond Deposition at Low Pressure Using Magneto-Microwave Plasma Chemical Vapor Deposition
- Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD
- The Synthesis of Diamond Films at Lower Pressure and Lower Temperature Using Magneto-Microwave Plasma CVD
- Sputtering Yields of Si and Ni from the Ni_Si_x System Studied by Rutherford Backscattering Spectrometry
- Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar^+ Ion Bombardment
- Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Si(LMM) Auger Electron Emission from Si Alloys by keV Ar_+ Ion Bombardment, New Effect and Application
- Heterogeneous nuclear ribonucleoprotein B1 expression in malignant mesothelioma
- Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering
- Fabrication of Chalcogenide Amorphous Semiconductor Diodes Using Low Temperature Thermal Diffusion Techniques
- Chalcogenide Amorphous Semiconductor Diodes
- Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy
- Normal Atmospheric Preparation of YBa_2Cu_4O_8 Superconductor from Nitrate Solution by Freeze-Drying Method
- High-Quality YBa_2Cu_3O_ Ceramics Prepared from Freeze-Dried Nitrates
- Superconducting YBa_2Cu_O_Particles Prepared from Freeze-Dried Nitrates
- Growth and Characterization of Homogeneous YBa_2Cu_3O_ Powders Prepared by a Freeze-Drying Method
- Infrequent existence of simian virus 40 large T antigen DNA in malignant mesothelioma in Japan
- Chronic Lung Abscess with Pasteurella multocida Infection
- Photodoping of Ag into Single Crystal As_2S_3
- Dependence of RF Power on the Content and Configuration of Hydrogen in Amorphous Hydrogenated Silicon by Reactive Sputtering : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Characterization of Hydrogenated Amorphous silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Spontaneous Inclusion of Oxygen in Sputter-Deposited Amorphous Silicon during and after Fabrication
- X-Ray Photoelectron and Electron Energy Loss Studies of Si-SiO_2 System: Angular Variation
- A Quantitative Analysis of Electron Enegy Loss Spectra of keV Electrons from Thin-Film-Substrate System
- Electronic Energy States of HfSe_2 and NbSe_2 by Low Energy Electron Loss Spectroscopy Study
- ELS Study of Amorphous Si(Substrate)-SiO_2(Film Overlayer) System with Varying Primary Electron Energy
- Electronic Energy States of Tungsten Dichalcogenides by Low Energy Electron Loss Spectroscopy Study
- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Initial Oxidation Process of Anodized Porous Silicon with Hydrogen Atoms Chemisorbed on the Inner Surface : Surfaces, Interfaces and Films
- Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- K Emission Spectra of Nontransition Elements Dissolved in Noble or Transition Metals : X-RAY EMISSION SPECTROSCOPY
- Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
- Detailed Study of Si-H Stretching Modes in μc-Si: H Film through Second Derivative IR Spectra
- Light Emission from Microcrystalline Si Confined in SiO_2 Matrix through Partial Oxidation of Anodized Porous Silicon
- Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Nitrogen Doping Effects on Electrical Properties of Diamond Films
- Low Temperature Reactions at Si-Metal Contacts : From SiO_2 Growth due to Si-Au Reaction to the Mechanism of Silicide Formation
- Temperature and Composition Dependences on the Electrical Properties of As-grown ZnHgTe Crystals Grown by the Travelling Heater Method : Semiconductors and Semiconductor Devices
- Effect of Annealing on Photoluminescence Properties in Ar^+-Ion Irradiated MOCVD-Grown ZnSe Films : Semiconductors and Semiconductor Devices
- Structural Change of Crystalline Porous Silicon with Chemisorption
- Preparation and Ion-Beam-Induced Luminescence of Thermal CVD Diamond
- Preparation of sp^3-Rich Amorphous Carbon Film by Hydrogen Gas Reactive RF-Sputtering of Graphite, and Its Properties
- Fabrication of Si:H Alloy with Plenty of -SiH_3 by Reactive Sputtering onto Low Temperature Substrate
- Thermal Stability of Electron Field Emission from Polycrystalline Diamond Film(Special Issue on Field Electron Emission from Carbon Materials)
- Stuffing of Noble Metals into Anodized Porous Silicon by Direct Evaporation
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
- Effects of Hg Annealing on Photoluminescence Spectra of CdTe Crystals and MOCVD-Grown CdTe/GaAs Films
- Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding
- Luminescent Characteristics of Plasma-Oxidized Porous Silicon
- Visible Photoluminescence from Anodically Oxidized Porous Silicon
- Effect of Oxygen Component in Magneto-Active Microwave CH_4/He Plasma on Large-Area Diamond Nucleation over Si
- Highly Efficient Electron Emission Diode of Single-Crystalline Chemical-Vapor-Deposition Diamond
- Performance of Electron Cycrotron Resonance Plasma Produced by a New Microwave Launching System in a Multicusp Magnetic Field with Permanent Magnets
- Formation of Nanofibers on the Surface of Diamond-Like Carbon Films by RF Oxygen Plasma Etching
- Effect of Electrical Conductivity of Substrate on RF-Sputter-Deposition of μc-Si:H at -180℃
- Low-Temperature Ti-Silicide Forming Reaction in Very Thin Ti-SiO_2/Si(111) Contact Systems
- Electrobleaching of WO_3 as Probed by Raman Scattering
- Annealing of Quenched-in Defects in Ge Crystal : Dislocation density 10^4-10^5 etch-pits/cm^2
- Effects of Dislocation Density on the Precipitation Rate of Cu in Ge
- Pulsed Microplasma Using Carbon Nanotubes for Cathode
- Association between CYP19A1 polymorphisms and sex hormones in postmenopausal Japanese women