Visible Photoluminescence from Anodically Oxidized Porous Silicon
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概要
- 論文の詳細を見る
Porous silicon (PS) anodically oxidized just after anodization of a silicon wafer has been investigated. Room-temperature photoluminescence (PL) peaks shifted to shorter wavelengths at the initial oxidation stage, followed by the PL blue shift saturation upon further oxidation. The temperature coefficient of the PL peak energy was -0.2meV/K in the former while it was -0.5 meV/K in the latter. PL excitation spectra around 4 eV also showed changes corresponding to the PL blue shifts with oxidation. The PL mechanism is discussed in relation to band-gap widening due to the size reduction effect and appearance of luminescence centers.
- 社団法人応用物理学会の論文
- 1994-07-01
著者
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HATTA Akimitsu
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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ITO Toshimichi
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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HIRAKI Akio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
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Hiraki A
Faculty Of Engineering University Of The Ryukyus
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Hiraki Akio
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University:cooperative Research Ce
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Ito Toshimichi
Department Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka
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Ito Toshimichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Hatta Akimitsu
Department Of Electrical Engineering Osaka University:(present Address)department Of Electronic And
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ARAKAKI Osamu
Department of Electrical Engineering, Osaka University
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MOTOI Kenji
Department of Electrical Engineering, Osaka University
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Arakaki Osamu
Department Of Electrical Engineering Osaka University
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Motoi Kenji
Department Of Electrical Engineering Osaka University
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