Quantitative Analysis of Polarization Phenomena in CdTe Radiation Detectors
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Raman Analysis of trans-Polyacetylene Chains in Hydrogenated Amorphous Carbon Films
- Improvement in γ-ray Detection Quality of Al/CdTe/Pt Schottky-Type Radiation Detector by Sulfur Treatment
- Analysis of Layer Structure Variation of Periodic Porous Silicon Multilayer
- Formation of Aluminum Schottky Contact on Plasma-Treated Cadmium Telluride Surface
- Preparation of Amorphous Hydrogenated Carbon Films by RF Sputtering at a Low-Hydrogen-Flow-Rate Region for Hydrogen-Reactive Substrates
- Formation of Surface Oxide Layer on CdTe and Reduction of Surface Leakage Current by Inductively Coupled O_2 Plasma Treatment
- Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition
- Effect of CO_2 Addition on Diamond Growth by DC Arc Plasma Jet Chemical Vapour Deposition
- Properties of Al Schottky contacts on CdTe(111)Cd surface treated by He and H2 plasmas
- Quantitative Analysis of Polarization Phenomena in CdTe Radiation Detectors
- Effect of He Plasma Treatment on the Rectification Properties of Al/CdTe Schottky Contacts
- Surface Modification of CdTe Crystal by Plasma Treatment Using Various Gases
- Growth and Characterization of Carbon Nanowalls(Special Issue on Field Electron Emission from Carbon Materials)
- Seeding Diamond Nanocrystals on Si Substrates for Deposition of Diamond Films(Special Issue on Field Electron Emission from Carbon Materials)
- Growth and Characterization of Diamond Films on SiO_2/Si Substrates
- Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Grown on Pt Substrates
- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
- Structural Study of Chemical-Vapor-Deposited Diamond Surface by High-Resolution Electron Microscopy
- Improvement in Visible Luminescence Properties of Anodized Porous Silicon by Indium Plating
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chermical Vapor Deposition ( Plasma Processing)
- Nitrogen Doping Effects on Electrical Properties of Diamond Films
- Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding
- Luminescent Characteristics of Plasma-Oxidized Porous Silicon
- Visible Photoluminescence from Anodically Oxidized Porous Silicon